Vishay SIZF906BDTT1GE3 High Power N-Channel MOSFET
The Vishay Siliconix SIZF906BDT is a dual N-channel 30 V MOSFET with integrated Schottky diode, designed for high-performance power switching applications. It features TrenFET® Gen IV technology, SkyFET® low side MOSFET structure, and RoHS compliance. Suitable for CPU core power, telecom DC/DC converters, and synchronous buck converters, it offers low Rds(on), high pulsed current capacity, and robust thermal and avalanche ratings, ensuring efficient, reliable operation in demanding environments.
Drain-source on resistance (Rds(on)): 0.0025-0.0037 Ω
Total gate charge: 38-80 nC
Package: PowerPAIR 6 x 5F lead (Pb) free
Soldering temperature (peak): 260°C
Buy the Vishay Series SkyFET Dual N-Channel MOSFET: SIZF906BDT
Purchase the Vishay SkyFET dual N-channel power MOSFET online today. Designed for demanding high-current switching applications, it ensures low conduction losses, robust thermal performance, and high reliability in CPU power supplies, telecom systems, and synchronous buck converters. Easy to integrate and RoHS compliant, this MOSFET provides exceptional efficiency, fast switching speeds, and durable operation. Buy now to enhance your electronic designs with this industry-leading power switching component, available with quick delivery and excellent support.
Get Vishay SkyFET dual N-channel MOSFET today—built for high current capacity, low Rds(on), and reliable high-speed switching in power applications.
Frequently Asked Questions
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