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Vishay SQ4431EYT1GE3 Automotive P-Channel MOSFET

The SQ4431EY is a P-channel Power MOSFET featuring TrenchFET® technology, rated for 30 V drain-source voltage and high junction temperature capability up to 175°C. It is qualified under AEC-Q101 standards, suitable for automotive applications requiring low Rds(on) and high efficiency. This compact SO-8 package device exhibits excellent thermal characteristics, low gate leakage, and high pulsed current capacity, making it ideal for switching and load management in automotive and industrial systems.

Authorized Distributors
Source:Newark
Part No:SQ4431EY-T1_GE3
Stock:167097
Inv Date:06-09-2026
Price: Unit price: $1.87
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Source:DigiKey
Part No:SQ4431EY-T1_GE3
Stock:5000
Inv Date:06-09-2026
Price: Unit price: $0.49975
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Part No:SQ4431EY-T1_GE3
Stock:53543
Inv Date:06-10-2026
Price: Unit price: $1.82
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Part No:SQ4431EY-T1-GE3
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Inv Date:06-10-2026
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Part No:SQ4431EY-T1-GE3
Stock:0
Inv Date:06-09-2026
Price: Unit price: $1.4
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Part No:SQ4431EY-T1_GE3
Stock:0
Inv Date:06-09-2026
Price: Unit price: $0.66
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Vishay SQ4431EYT1GE3 Automotive P-Channel MOSFET Specifications:

  • Drain-Source Voltage: -30 V
  • Gate-Source Voltage: +20 V
  • Continuous Drain Current: -10.8 A at 25°C, -6.2 A at 125°C
  • Continuous Source Current: -5.4 A (diode conduction)
  • Pulsed Drain Current: -43.2 A
  • Single Pulse Avalanche Current: -24 A
  • Avalanche Energy: 22 mJ
  • Maximum Power Dissipation: 6 W at 25°C, 2 W at 125°C
  • Operating Junction and Storage Temperature Range: -55°C to +175°C
  • Junction-to-Ambient Thermal Resistance: 92°C/W
  • Junction-to-Foot Thermal Resistance: 25°C/W
  • Rds(on): 0.052 Ω at 10 V, 0.045 Ω at 4.5 V
  • Gate Threshold Voltage: -15 to -20 V
  • Gate Leakage Current: <100 nA at 20 V
  • Capacitances: Ciss 1010 pF, Coss 243 pF, Crss 167 pF
  • Gate Charge: 25 nC
  • Package: SO-8 (JEDEC MS-012)

Buy the Vishay Series Automotive P-Channel MOSFET: SQ4431EY

Purchase the Vishay Series SQ4431EY P-channel Power MOSFET online today for reliable automotive switching solutions. This high-performance device offers a 30 V drain-source voltage, low Rds(on), and high pulsed current capacity, ensuring efficiency and durability in demanding automotive and industrial applications. The compact SO-8 package facilitates easy integration into various circuit designs, supported by excellent thermal characteristics and AEC-Q101 qualification. Secure your supply now for consistent performance and quality assurance in your projects.

Order your Vishay Series automotive P-channel MOSFET SQ4431EY today and give your projects the dependable quality they deserve.

Frequently Asked Questions

Where can I buy Vishay SQ4431EYT1GE3?

You can click on the BUY or RFQ button to purchase SQ4431EYT1GE3 from an authorized Vishay distributor.

How do I troubleshoot issues or seek technical support for part SQ4431EYT1GE3?

You can download the SQ4431EYT1GE3 datasheet or visit the Vishay website for support.

Who is the manufacturer of SQ4431EYT1GE3?

Vishay

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