The SQJ868EPT1GE3 is a high-performance N-channel power MOSFET designed for automotive and industrial applications, featuring a 40 V drain-source voltage and low Rds(on). It is housed in a PowerPAK SO-8L package, which offers excellent thermal management, high current capability, and reliable switching characteristics. With a maximum continuous drain current of 30 A at 25°C, this device is suitable for demanding power management tasks, automotive electronics, and switching power supplies. Its robust construction ensures durability and efficiency in various circuit environments.
Gate-source threshold voltage: 2.5 V min, 3.0 V typ, 35 V max
Continuous drain current: 30 A at 25°C
On-state drain resistance: 0.012 Ω at 10 V GGS, 14 A
Gate charge: 36 to 55 nC
Total gate charge: 36 to 55 nC
Thermal resistance junction-to-ambient: 85°C/W
Maximum power dissipation: 16 W at 25°C
Operating junction and storage temperature: -55°C to +175°C
Soldering peak temperature: 260°C
Package: PowerPAK SO-8L, leadless, surface-mount
Buy the Vishay Series PowerPAK SO-8L: SQJ868EP-T1
Experience exceptional power performance with the Vishay SQJ868EPT1GE3 MOSFET. This device offers reliable 40 V voltage handling, low Rds(on), and high current capacity, making it perfect for automotive and industrial power management applications. Its PowerPAK SO-8L package ensures efficient thermal dissipation and robust construction. Designed for demanding environments, this MOSFET guarantees durability, efficient switching, and minimal energy loss, providing a reliable solution for your power circuitry needs. Order online now to enhance your electronic systems with Vishay's trusted quality.
Get Vishay SQJ868EPT1GE3 today—built for precision and long-lasting durability in power switching applications.
Frequently Asked Questions
Where can I buy Vishay SQJ868EPT1GE3?
You can click on the BUY or RFQ button to purchase SQJ868EPT1GE3 from an authorized Vishay distributor.
How do I troubleshoot issues or seek technical support for part SQJ868EPT1GE3?