The Vishay Siliconix PowerPAK 1212-8W N-Channel MOSFET is designed for automotive applications, featuring a trenchFET technology. It offers a drain-source voltage of 30 V, continuous drain current of 16 A, and a maximum power dissipation of 20 W at 125°C. The device operates within a temperature range of -55°C to +175°C and has robust thermal resistance ratings, making it suitable for high-performance power switching and load management in automotive and industrial environments. Its leadless package ensures easy mounting and reliable connections.
Operating junction temperature range: -55 to +175°C
Thermal resistance junction-to-ambient: 81 °C/W
Thermal resistance junction-to-case: 24 °C/W
Package: PowerPAK 1212-8W, leadless
Soldering peak temperature: 260°C
Gate threshold voltage: 1.5 V to 20 V
On-state resistance: 0.0085 Ω at Vgs=10 V
Forward transconductance: 70 S
Capacitance: Ciss=1492 pF typical
Source-Drain diode forward voltage: 0.82 V at 15 A
Buy the Vishay Series PowerPAK 1212-8W N-Channel MOSFET: SQS482ENWT1GE3
Order the Vishay SQS482ENWT1GE3 automotive MOSFET online today and benefit from reliable high-current switching, excellent thermal management, and easy installation in your automotive and industrial projects. This high-quality power MOSFET features a 30 V drain-source voltage, 16 A continuous drain current, and a robust PowerPAK package that ensures excellent thermal and electrical performance. Whether you're upgrading an existing system or designing a new power module, purchasing online allows fast delivery, competitive pricing, and expert support to keep your project on track.
Buy Vishay SQS482ENWT1GE3 now and experience unmatched reliability and high-current switching performance in automotive applications.
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