The Vishay Siliconix SQS966ENW is a high-performance automotive dual N-channel MOSFET with a voltage rating of 60 V, designed for demanding automotive applications. Featuring trenchFET technology, it offers ultralow on-resistance of 0.036 at Vos = 10V, ensuring efficient power switching and minimized heat dissipation. The device is AEC-Q101 qualified, RoHS compliant, and suitable for high-temperature environments up to 175 °C. Encased in PowerPAK 1212-8W package, it provides excellent thermal performance and reliable operation under dynamic loads, ideal for automotive electronic systems requiring high efficiency and durability.
Operating junction temperature range: -55°C to +175°C
Junction-to-ambient thermal resistance: 94 °C/W
Junction-to-case thermal resistance: 5.4 °C/W
Body diode forward voltage: 1.4 V at 6A
Body diode reverse recovery time: 44 ns
Package: PowerPAK 1212-8W, leadless with exposed copper terminal
Soldering: Peak 260°C, manual rework not recommended
Designed for automotive electronics, high temperature, and high current switching
Buy the Vishay Series PowerMOS 60V N-Channel MOSFET: SQS966ENWT1GE3
Purchase the Vishay SQS966ENWT1GE3 online today—engineered for automotive applications requiring high efficiency and engine control. This dual N-channel MOSFET features a 60V voltage rating, low on-resistance, and a rugged PowerPAK 1212-8W package, making it ideal for demanding environments. With proven reliability, it ensures optimal power management, fast switching, and thermal stability up to 175°C. Order now to enhance your automotive electronics with a durable, high-performance MOSFET built for long-lasting operation and superior control in dynamic conditions.
Get Vishay SQS966ENWT1GE3 today—built for automotive high-temperature durability and efficient power switching.
Frequently Asked Questions
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