A 950 nm infrared emitting diode based on GaAs technology, housed in a hermetically sealed package. Designed for use as a radiation source in near-infrared applications, this diode offers high reliability, high radiant power, and high radiant intensity. It features a half-intensity beam angle of ±5°, low forward voltage, and is suitable for high pulse current operation. The device provides good spectral matching with silicon photodetectors, making it ideal for various sensing and communication applications. Due to high market demand, lead times may be extended, and delivery dates are subject to fluctuation. The product is exempt from discounts.
Order the Vishay TSTS7100 infrared diode online today for high radiant power and reliable performance in near-infrared applications. This GaAs-based component offers a precise ±5° beam angle, low forward voltage, and excellent spectral matching with silicon photodetectors, making it ideal for sensors, communication systems, and industrial automation. The hermetically sealed TO-18 package ensures durability and high reliability. With a fast response time and high pulse current capacity, it’s perfect for demanding high-frequency and short pulse applications. Secure your supply now and enhance your infrared technology projects with ease.
You can click on the BUY or RFQ button to purchase TSTS7100 from an authorized Vishay distributor.
You can download the TSTS7100 datasheet or visit the Vishay website for support.
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