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WURTH ELEKTRONIK 140816140010 Optocoupler Phototransistor

The WURTH ELEKTRONIK 140816140010 is an optocoupler incorporating a phototransistor output. This device provides a crucial layer of electrical isolation, preventing ground loops and protecting sensitive circuits from voltage spikes. It's suitable for a wide range of applications including industrial control systems, power supplies, and data transmission. The component's robust design and compliance with RoHS standards ensure reliable performance and environmental responsibility. It is not intended for use in safety-critical applications without thorough evaluation.

Authorized Distributors
Source:Newark
Part No:140816140010
Stock:5
Inv Date:06-12-2026
Price: Unit price: $0.413
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Source:DigiKey
Part No:140816140010
Stock:97
Inv Date:06-12-2026
Price: Unit price: $0.36
Buy/RFQ:
Part No:140816140010
Stock:0
Inv Date:06-12-2026
Price: Unit price: $0.38
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WURTH ELEKTRONIK 140816140010 Optocoupler Phototransistor Specifications:

  • Type: Optocoupler Phototransistor
  • Package: DIP 4, Standard
  • Housing Color: White
  • Operating Temperature: -55 up to +110 °C
  • Storage Temperature: -40 °C ; < 75 % RH
  • Moisture Sensitivity Level (MSL): 1
  • Product Marking: 816 (Series 816)
  • Date Code: YWW
  • Forward Voltage (VF): 1.24 - 1.4 V (IF= 10 mA)
  • Reverse Current (IREV): ≤ 10 µA (VREV= 6 V)
  • Input Capacitance (Cin): 10 pF (V= 0 V, f = 1 kHz)
  • Collector-Emitter Dark Current (ICEO.Dark): ≤ 100 nA (VCE= 20 V, IF= 0)
  • Collector-Emitter Breakdown Voltage (V(BR)CE): ≥ 80 V (IC= 100 µA, IF= 0)
  • Emitter-Collector Breakdown Voltage (V(BR)EC): ≥ 7 V (IE= 100 µA, IF= 0)
  • Current Transfer Ratio (CTR): 50 - 600 % (IF= 5 mA, VCE= 5 V)
  • Collector-Emitter Saturation Voltage (VCEsat): ≤ 0.2 V (IF= 20 mA, IC= 1 mA)
  • Rise Time (tr): 3 - 18 µs (VCE= 2 V, IC= 2 mA, R~~L~~= 100 Ω)
  • Fall Time (tf): 4 - 18 µs (VCE= 2 V, IC= 2 mA, R~~L~~= 100 Ω)
  • Cut-Off Frequency (fc): 80 kHz (VCE= 2 V, IC= 2 mA, RL= 100 Ω)
  • Floating Capacitance (CIO): ≤ 0.4 pF (V= 0 V, f = 1 MHz)
  • Isolation Resistance (RISO): ≥ 1 TΩ (DC = 500 V, 40~60 % R.H.)
  • Forward Current (IF): 60 mA
  • Peak Forward Current (IF Peak): 1 A (duty/ 100 @ 100 Hz)
  • Reverse Voltage (VREV): 6 V
  • Input Power Dissipation (PI): 100 mW
  • Collector Emitter Voltage (VCE): 80 V
  • Emitter Collector Voltage (VEC): 7 V
  • Collector Current (ICE.P): 50 mA
  • Output Power Dissipation (PO): 150 mW
  • Power Dissipation (PDiss): 200 mW
  • Isolation Voltage (VISO): 5000 V (RMS)

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WURTH ELEKTRONIK

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