DIODES INC. DMN1029UFDB7 N-Channel Enhancement Mode MOSFET
The DMN1029UFDB is a lead-free N-channel enhancement mode MOSFET designed for high-efficiency power management. It offers low on-resistance and input capacitance, making it ideal for load switches and portable power applications. Its compact U-DFN2020-6 package features a maximum height of 0.6mm, ensuring space-saving integration. Fully RoHS and halogen-free, this device supports automotive applications with qualified manufacturing. Suitable for power management functions, load switching, and portable power adaptors, it provides reliable performance in demanding environments.
Package: U-DFN2020-6 (Type B), 0.545 x 0.605 mm footprint
RoHS, REACH, halogen and antimony free, compliant with environmental standards
Maximum Vds: 12 V, Gate Vgs: ±8 V, Power Dissipation: 2 W, Lead-free and RoHS compliant
Buy the Diodes Series DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET: DMN1029UFDB
Buy the Diodes Series DMN1029UFDB N-channel enhancement mode MOSFET online today. This lead-free, RoHS-compliant device offers low on-resistance for high-efficiency power management in load switches, portable devices, and automotive applications. Its compact U-DFN2020-6 package ensures space-saving, reliable performance. Suitable for power adapters, load switches, and portable electronics, it combines environmental friendliness with excellent electrical characteristics, making it a dependable choice for demanding industrial and automotive projects. Order now for fast delivery and superior performance.
Order your Diodes Series DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET today and give your power management designs the dependable, high-performance efficiency they need.
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