The device is a high-performance N-channel enhancement mode MOSFET designed for power management and load switching applications. With a voltage rating of 80V and a maximum temperature of +175°C, it offers low on-resistance (~3.8mΩ at 10V), high efficiency, and robust switching capabilities. It is RoHS compliant, halogen-free, and developed for automotive applications, ensuring reliability in high ambient temperatures. The compact PowerDI®5060-8 package features lead-free matte tin over copper finish, ideal for demanding electronic circuits requiring efficient power regulation and switching.
DIODES INC. DMTH8004LPS13 N-channel MOSFET Specifications:
Drain-Source Voltage: 80 V
Gate-Source Voltage: +20 V
Continuous Drain Current at 10V: 100 A
Maximum Continuous Body Diode Forward Current: 83 A
Pulsed Drain Current (10us pulse): 400 A
Thermal Resistance Junction to Ambient (Steady State): 51°C/W
Total Power Loss (at Ta=25°C): 1.5 W
Package: PowerDI®5060-8, Molded Plastic with RoHS compliant lead-free finish
Flammability Rating: UL 94V-0
Gate Threshold Voltage: 1.3V to 2.8V
On-Resistance (Vgs = 10V): 3.8mΩ
Operate and Storage Temperature Range: -55°C to +175°C
Solderability Standard: MIL-STD-202, Method 208
Body Diode Reverse Recovery Time: 53 ns
Buy the Buy Diodes High-Performance N-Channel MOSFET Part Number DMTH8004LPS Online
Secure your supply of high-quality N-channel MOSFETs with Diodes DMTH8004LPS available online now. Designed for high ambient temperatures up to 175°C, with a low on-resistance of 3.8mΩ at 10V, this rugged device ensures efficient power management and robust switching performance in automotive and industrial applications. Its RoHS compliance and lead-free construction make it environmentally friendly. Quick online purchase enables you to enhance your electronic systems with reliable, high-performance power transistors capable of handling up to 100A continuously, ensuring seamless operation and durability.
Buy Diodes DMTH8004LPS now and experience unmatched reliability and superior power switching in high-temperature automotive and power management circuits.
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