The high-speed switching series fifth generation IGBT features TRENCHSTOP™ 5 technology, offering best-in-class efficiency in hard switching and resonant topologies. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175°C, it is designed for demanding power applications such as off-board and on-board chargers, DC/DC converters, and power-factor correction. It is qualified according to AEC-Q101, RoHS compliant, and features a compact, green package suitable for high-performance industrial and automotive uses.
INFINEON AIGB30N65H5ATMA1 High Speed IGBT Module Specifications:
Voltage Rating: 650 V
Collector Current: 30 A
Peak Pulsed Collector Current: 90 A
Gate-Emitter Voltage: +20 V
Maximum Junction Temperature: 175°C
Thermal Resistance Junction-Case: 0.80 K/W
Power Dissipation at 25°C: 188 W
Soldering Temperature (reflow): 260°C
Package Type: PG-TO263-3
Breakdown Voltage: 650 V
Gate Charge: 700 nC
Switching Energy (at 150°C): 0.55 mJ
Operating Temperature Range: -40°C to 175°C
Qualified: AEC-Q101, RoHS compliant
Package Dimensions: Refer to package drawing with dimensions in mm and inches
External Inductance (Le): 7 nH
External Capacitances: Cies 1800 pF, Coes 50 pF
Buy the Buy Infineon IGBT Part Number AIGB30N65H5 Online
Purchase the Infineon high-speed IGBT module equipped with cutting-edge TRENCHSTOP™ 5 technology. This robust power transistor offers 650V breakdown voltage, low gate charge of 700 nC, and a maximum junction temperature of 175°C for efficient, reliable performance in power conversion, motor drives, and automotive applications. It provides excellent switching characteristics, low power dissipation, and is qualified according to top industry standards for automotive and industrial reliability. Buy now for long-lasting operation and high efficiency in your next project.
Get Infineon AIGB30N65H5 today—built for high-speed switching, power efficiency, and long-lasting durability in demanding power modules.
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