The CoolSiC™ 1200V Schottky Diode offers high efficiency and reliability for industrial power applications, solar inverters, and drives. Featuring silicon carbide semiconductor material, it provides zero reverse recovery and low forward voltage at high temperatures. Its rugged dv/dt characteristics enable reliable surge current handling, making it suitable for high-frequency, high-power density systems. Qualified by JEDEC standards, this diode enhances system efficiency, reduces heatsink size, and minimizes electromagnetic interference, ensuring robust operation during surge events and high operating temperatures for industrial and renewable energy solutions.
Junction to Ambient Thermal Resistance (Leaded): 62 K/W
Operating Temperature Range: -55°C to 175°C
Storage Temperature Range: -55°C to 150°C
Soldering Temperature (Reflow): 260°C according to JEDEC J-STD-020
Power Dissipation: 109 W at 25°C
Device Package: PG-TO263-2
Peak dv/dt Ruggedness: 80 V/ns
Capacitive Charge at 800V, 150°C: 24 nC
Capacitance at 400V, 1 MHz: 21 pF
Buy the Infineon IDK05G120C5 U+2013 Reliable SiC Diode for Industrial Applications
Purchase the Infineon Silicon Carbide Schottky Diode today to optimize your industrial, solar, or drives applications. This 1200V, high-current diode offers excellent thermal performance, surge current capability, and low forward voltage at high temperatures. Designed for high-frequency switching and enhanced system efficiency, it reduces heatsink requirements and electromagnetic interference, ensuring reliable operation during surge events. Ideal for power supplies, inverters, and industrial drives, this diode guarantees superior durability, efficiency, and cost savings for advanced power applications.
Order your Infineon Series IDK05G120C5 high-performance SiC diode today and enhance your industrial power systems with reliable surge capability and high efficiency.
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