These Infineon RF Schottky diodes are silicon low barrier N-type devices with integrated guard ring for over-voltage protection. Suitable for mixer functions up to 12 GHz, they feature low junction capacitance of 0.29 pF, low forward voltage, and low inductance of 2 nH. Packaged in industry-standard SOT143, they are qualified for industrial applications including satellite systems, Ku-band low noise blocks, and security systems, with a typical size of 2.9 mm x 2.4 mm x 1 mm and RoHS compliance for environmentally friendly use.
Buy the Infineon BAT15-099R – Reliable RF Mixer Diodes for Industrial Applications
Ensure optimal high-frequency performance with Infineon RF Schottky diodes. Designed for mixers up to 12 GHz, they offer low capacitance, low inductance, and robust protection features. Packaged in industry-standard SOT143, these components are suitable for satellite systems, Ku-band low noise blocks, and security applications. Qualified for industrial use, RoHS compliant, with a compact size and heat resistance, they deliver reliable and effective performance in demanding environments. Purchase online today to enhance your RF systems.
Buy Infineon BAT15-099R RF Schottky diodes now and experience unmatched reliability and high-frequency performance for your industrial RF applications.
Frequently Asked Questions
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