The IPD60R180C7 is a 600V power MOSFET from the CoolMOS™ C7 series, designed using superjunction technology for high efficiency and ruggedness. Suitable for hard and soft switching in PFC and LLC topologies, it offers increased dv/dt ruggedness to 120V/ns, low Rds(on), and high power density, making it ideal for server power supplies, telecom systems, and solar inverters. Its advanced features ensure higher efficiency, faster switching, and smaller form factors for demanding industrial and consumer applications.
INFINEON IPD60R180C7ATMA1 Power MOSFET Specifications:
Maximum drain-source voltage: 600V
Continuous drain current: 2A
Pulsed drain current: 45A
Avalanche energy, single pulse: 53mJ
Avalanche energy, repetitive: 0.26mJ
Gate-source voltage: ±20V
Max Power Dissipation: 68W
Operating junction temperature: -55°C to 150°C
Thermal resistance, junction-case: 1.83°C/W
Thermal resistance, junction-ambient: 62°C/W
Gate charge (Qg): 24nC
Rise time: 7ns
Fall time: 6ns
Gate resistance: 0.85Ω
Buy the Cinfineon IPD60R180C7 – Reliable Power MOSFET for Industrial Applications
Purchase the Cinfineon IPD60R180C7 power MOSFET online today to enhance your power electronics systems. Designed for high voltage, low Rds(on), and fast switching, this MOSFET ensures superior performance in industrial power supplies, telecom applications, and solar inverters. Its rugged dv/dt capability and small package size make it ideal for demanding high-performance applications. Experience reliable power switching with excellent thermal management and energy efficiency. Order now to optimize your system’s efficiency and power density with this advanced semiconductor device.
Get Cinfineon IPD60R180C7 today—built for high efficiency, rugged operation, and compact design in power management solutions.
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