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INFINEON BFP520FH6327XTSA1 RF Transistor

The BFP520F is a high-gain, low-noise silicon bipolar RF transistor optimized for low noise amplifiers up to 1.8 GHz and oscillators up to 15 GHz. Featuring outstanding Gms of 22.5 dB at 1.8 GHz and a minimum noise figure of 0.95 dB at 1.8 GHz, it is ideal for RF and microwave applications demanding high stability and low interference. Designed with a thin small flat package that is RoHS compliant and halogen-free, it also conforms to AEC-Q101 standards, making it suitable for automotive and industrial environments. This device requires careful handling due to its ESD sensitivity.

Authorized Distributors
Source:DigiKey
Part No:BFP520FH6327XTSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.46
Buy/RFQ:
Source:DigiKey
Part No:BFP520FH6327XTSA1
Stock:550987
Inv Date:05-29-2026
Price: Unit price: $0.24
Buy/RFQ:
Part No:BFP520FH6327XTSA1
Stock:0
Inv Date:05-30-2026
Price: N/A
Buy/RFQ:

INFINEON BFP520FH6327XTSA1 RF Transistor Specifications:

  • Transition frequency fr = 45 GHz
  • Gain (Gms) = 22.5 dB at 1.8 GHz
  • Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
  • Collector-emitter voltage VcE = 2.5 V at 25°C, 24 V at -55°C
  • Collector-base voltage VoB = 10 V
  • Emitter-base voltage VeB = 1 V
  • Collector current Io = 50 mA
  • Base current Ig = 5 mA
  • Total power dissipation Pd = 120 mW
  • Junction temperature Tj = 150°C
  • Thermal resistance RθJ-A = 430 K/W
  • DC current gain hFE = 70-170
  • Collector-emitter breakdown voltage VcEo = 3.5 V (typical)
  • Collector-emitter cutoff current Ice = 10 pA
  • Collector-base cutoff current IcBo = 200 μA
  • Emitter-base cutoff current IEBo = 35 μA
  • AC transition frequency fr = 45 GHz
  • Collector-base capacitance Co = 0.14 pF
  • Emitter-base capacitance Cap = 0.31 pF
  • Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
  • Maximum power gain Gms = 22.5 dB at 1.8 GHz
  • Third order intercept point IP3 = 23.5 dBm
  • 1dB compression point P1dB = 10.5 dBm
  • Package: TSFP-4, RoHS and halogen-free, visible leads

Buy the Infineon Series RF Transistor: BFP520F

Enhance your RF designs with the Infineon BFP520F, a high-gain, low-noise silicon bipolar RF transistor tailored for applications up to 15 GHz. It offers outstanding performance with a Gms of 22.5 dB at 1.8 GHz and a noise figure of only 0.95 dB. Its compact, RoHS-compliant, halogen-free package ensures ease of integration for automotive and industrial use. Ideal for low noise amplifiers and oscillators, this device is ESD sensitive, so proper handling is essential to maintain its reliability and longevity. Buy online now for superior RF performance.

Order your Infineon Series BFP520F RF transistor today and give your projects the dependable low noise and high gain performance they deserve.

Frequently Asked Questions

Where can I buy INFINEON BFP520FH6327XTSA1?

You can click on the BUY or RFQ button to purchase BFP520FH6327XTSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part BFP520FH6327XTSA1?

You can download the BFP520FH6327XTSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of BFP520FH6327XTSA1?

INFINEON

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