The BFP620F is a low noise Silicon Germanium bipolar RF transistor optimized for high-frequency applications up to 6 GHz. It features outstanding noise figures of 0.7 dB at 1.8 GHz and 1.3 dB at 6 GHz, with maximum stable gains of 21 dB at 1.8 GHz and 10 dB at 6 GHz. The compact, thermally efficient TSFP-4 package measures 1.4 x 0.8 x 0.59 mm, is RoHS compliant, halogen-free, and suitable for demanding RF and microwave circuits, providing high reliability and performance consistency.
Package: TSFP-4, dimensions 1.4 x 0.8 x 0.59 mm, halogen-free, RoHS compliant
Collector-emitter voltage VcE = 2.3 V at 25°C, 2.1 V at -55°C
Collector-base voltage VcB = 7.5 V, Emitter-base voltage VeB = 1.2 V
Maximum collector current Ic = 80 mA, total power dissipation Ptot = 185 mW at 96°C
Junction temperature Tj = 150°C, storage temperature -55°C to 150°C
DC current gain hFE = 110 to 270, transition frequency fT = 65 GHz
Noise figure NF_min = 0.7 dB at 1.8 GHz, NF = 1.3 dB at 6 GHz
Power gain Gms = 21 dB at 1.8 GHz, Gma = 10 dB at 6 GHz
Capacitances: Co = 0.12 to 0.2 pF, Coe max 0.2 pF
Source impedance for min. noise figure varies with frequency
Thermal resistance junction-soldering point Rθ_j-s = 290 K/W
Transition frequency fT = 65 GHz
Buy the Infineon BFP620F – Reliable RF Transistor for Industrial Applications
Order the Infineon BFP620F online today to equip your RF and microwave circuits with low noise, high gain, and compact reliability. This silicon germanium transistor ensures exceptional signal integrity up to 6 GHz, with outstanding noise figures and stable gain characteristics. Its small, RoHS-compliant TSFP-4 package makes it ideal for space-constrained applications requiring high performance and durability. Purchase now to enhance your design with a proven semiconductor solution tailored for advanced RF systems, wireless communication, and instrumentation.
Get Infineon BFP620F today—built for high-frequency RF applications with outstanding noise performance and robust micro-package design.
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