The CoolSiC Generation 6 from Infineon is a 650V SiC Schottky diode designed for high efficiency in power conversion applications. Featuring a low forward voltage of 1.25V, high dv/dt ruggedness of 150 V/ns, and qualified for industrial use, this diode offers system efficiency improvements, cost savings, and supports higher frequency and power density in applications like solar inverters, power factor correction in SMPS, and uninterruptible power supplies. Its compact design and advanced material technology enable reliable performance in demanding environments.
Maximum Repetitive Forward Current: 12 A at Tc=140°C
Surge-Repetitive Forward Current: 53 A at 25°C, 10 ms
Surge Non-Repetitive Forward Current: 64 A at 25°C, 10 ms
Repetitive Peak Reverse Voltage: 650 V
Forward Voltage (T=25°C): 1.25 V at 12 A, 1.35 V at 12 A (Tj=25°C)
Forward Voltage (T=150°C): 1.5 V at 12 A
Maximum Reverse Current: 40 A at 420 V, T=125°C
Total Capacitance: 35 pF at 300 V, f=1 MHz
Thermal Resistance, Junction-Case: <19 K/W
Operating Temperature Range: -55°C to 175°C
Power Dissipation: 81 W at T=25°C
Mounting Torque: 70 Ncm
Repetitive Peak Reverse Voltage: 650 V
dv/dt Ruggedness: 150 V/ns
Buy the Buy Infineon CoolSiC Generation 6 Part Number IDH12G65C6XKSA1 Online
Experience the superior performance of the Infineon CoolSiC Generation 6 650V SiC Schottky diode. Engineered for high efficiency, low forward voltage, and rugged dv/dt. Perfect for solar inverters, power supplies, and power conversion systems, it offers system cost savings, higher operational frequency, and increased power density. Its compact design and qualified industrial standard ensure reliable operation in demanding applications. Purchase online now to benefit from advanced silicon carbide technology, enhancing your power electronics' efficiency and durability.
Get Infineon CoolSiC Generation 6 IDH12G65C6XKSA1 today—designed for high efficiency, rugged operation, and reliable power conversion.
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