The BFP620 is a highly linear, low noise SiGe:C bipolar RF transistor designed for wireless applications such as CDMA and WLAN. It provides outstanding performance with a noise figure as low as 0.7 dB at 1.8 GHz and a gain of 21.5 dB at 1.8 GHz, making it ideal for high-frequency, low-voltage environments. The transistor features a high collector-emitter voltage of 2.3 V, maximum collector current of 80 mA, and a total power dissipation of 185 mW. Its RoHS-compliant halogen-free package ensures environmental safety and reliability in demanding RF circuitry.
Designed for RF high-frequency circuit integration and low noise amplification
Buy the Buy Infineon RF Transistor Part Number BFP620H7764XTSA1 Online
Purchase the Infineon RF Transistor BFP620H7764XTSA1 online today and benefit from the highest quality RF components for your wireless communication projects. This transistor offers exceptional low noise figures, wide frequency operation up to 65 GHz, and high linearity, perfect for advanced CDMA and WLAN applications. Its RoHS-compliant, halogen-free package ensures environmental safety and durability. With reliable performance specifications including 21.5 dB gain at 1.8 GHz and a noise figure as low as 0.7 dB, this device guarantees high-performance RF amplification. Get yours now to optimize your high-frequency RF circuitry.
Order your Infineon RF Transistor BFP620H7764XTSA1 today and enhance your wireless designs with outstanding low noise performance and high linearity.
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