The IPP60R022S7 is a 600V CoolIMOS SJ S7 power MOSFET designed for high-efficiency low-frequency switching applications. It offers the lowest Rdson in its class, enhancing energy efficiency and system performance. Ideal for solid-state relays, circuit breakers, line rectification in SMPS, inverters, computing, telecom, UPS, and solar systems, it features fast switching times, high pulse current capability, robustness against shock and vibration, and long reliability. Fully qualified according to JEDEC standards, this device ensures safe, reliable operation in demanding industrial environments.
INFINEON IPP60R022S7XKSA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 600 V
Drain-source on-state resistance: 0.047 Ω
Gate threshold voltage: 3.5 - 4.5 V
Pulsed drain current: 375 A
Avalanche energy: 289 mJ
Gate source voltage: ±20 V
Power dissipation: 390 W
Operating junction temperature: -55°C to 150°C
Thermal resistance, junction to case: 0.32 °C/W
Thermal resistance, junction to ambient: 62 °C/W
Gate charge total: 150 nC
Gate to source charge: 31 nC
Reverse recovery time: 460 ns
Diode forward voltage: 0.83 V
Package: PG-TO 220-3
Buy the Buy Infineon IPP60R022S7 Power Device Part Number IPP60R022S7 Online
Purchase the Infineon IPP60R022S7 power MOSFET online today and secure a high-performance component suitable for industrial energy management, inverters, circuit breakers, and solid-state relays. Engineered for low conduction losses, fast switching, and excellent thermal stability, this 600V device is fully JEDEC-qualified, ensuring long-lasting durability and reliable operation in demanding environments. Simplify your design process by sourcing this high-quality MOSFET online, enabling efficient, compact, and cost-effective power management solutions for your projects.
Get Infineon IPP60R022S7 today—built for high power efficiency and rugged reliability in demanding industrial and power switching applications.
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