The BFP720F is a low noise, high-performance wideband NPN bipolar RF transistor designed with Infineon's SiGe:C technology. It offers a maximum stable gain of 26.5 dB at 1.9 GHz with only 13 mA current, and 15 dB at 10 GHz. Its minimal noise figures of 0.7 dB at 5.5 GHz and 1.0 dB at 10 GHz make it ideal for mobile and broadband RF applications. Housed in a compact, RoHS-compliant package, the device supports voltages up to 4.0 V and currents up to 25 mA, suitable for applications like WiFi, Bluetooth, GPS, and satellite communication.
Purchase the Infineon BFP720F today online and equip your RF designs with a low noise, high gain wideband transistor. Designed with advanced SiGe:C technology, it provides excellent performance at high frequencies up to 45 GHz. Its compact, RoHS-compliant package makes integration easy for mobile, WiFi, Bluetooth, GPS, and satellite communication systems. Its robustness supporting voltages up to 4.0 V and currents up to 25 mA ensures reliable operation, enabling efficient, high-performance RF amplifier designs with minimal noise figures and high linearity for demanding applications.
You can click on the BUY or RFQ button to purchase BFP720FH6327XTSA1 from an authorized INFINEON distributor.
You can download the BFP720FH6327XTSA1 datasheet or visit the INFINEON website for support.
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