The BFR843EL3 is a low noise broadband NPN bipolar RF transistor designed for optimal performance in wireless communication, satellite navigation, and broadband amplification applications. It features integrated feedback for broadband pre-matching to 50 Ω, enhanced stability against parasitic oscillations, and internal ESD protection, making it ideal for mobile and low-voltage circuits. The device is based on Infineon’s SiGe:C heterojunction bipolar technology, supporting voltages up to 2.25 V and currents up to 55 mA, with a compact leadless package for space-efficient module integration.
Collector emitter voltage: 2.25 V (max), 2.0 V at 55°C
Collector base voltage: 2.9 V (max)
Base current: 5 mA max
Collector current: 55 mA max
RF input power: 20 dBm at 1.9 GHz
Total power dissipation: 125 mW at 25°C
Junction temperature: 150°C
Storage temperature: -55°C to 150°C
Thermal resistance junction to soldering point: 375 K/W (typ.)
Noise figure: 1 dB at 2.4 GHz, 1.15 dB at 5.5 GHz
High gain: 22 dB at 2.4 GHz, 16.5 dB at 5.5 GHz
OIP3: 22 dBm at 2.4 GHz and 5.5 GHz
Package: TSLP-3-10, leadless plastic
Buy the Infineon Series BFR843EL3 RF Transistor: BFR843EL3E6327XTSA1
Order the Infineon BFR843EL3E6327XTSA1 online today to enhance your wireless communications, satellite, and broadband applications. This low noise broadband RF transistor provides superior stability, high gain, and internal ESD protection, making it perfect for mobile and low-voltage circuits. Compact and reliable, it supports voltages up to 2.25 V and currents up to 55 mA, ensuring robust performance across various demanding RF environments. Ideal for engineers aiming for efficient, space-saving amplification solutions in modern electronics.
Buy Infineon BFR843EL3E6327XTSA1 now and experience unmatched low noise performance and reliable broadband amplification for your wireless and satellite systems.
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