The BFP840FESD is a high-performance Silicon Germanium Bipolar RF Transistor optimized for 5-6 GHz Wi-Fi applications. It offers excellent input and output power matching, low noise figures, and high transducer gain, making it ideal for mobile, satellite, and Wi-Fi systems. The device features integrated ESD protection, low power consumption, and robust operation with a maximum RF input power of 20 dBm. Its compact TSFP-4-1 package ensures ease of integration into various RF system designs, supporting high-frequency reliability and efficiency.
INFINEON BFP840FESDH6327XTSA1 RF Power Transistor Specifications:
Package: TSFP-4-1
Collector Emitter Voltage: 2.25 V
Collector Power Dissipation: 75 mW
Maximum RF Input Power: 20 dBm
Transition Frequency: 85 GHz
Noise Figure at 5.5 GHz: 0.75 dB
Gain at 5.5 GHz: 19 dB
Output Third Order Intercept Point: 22.5 dBm
Collector-Base Voltage: 2.9 V
Collector-Emitter Voltage: 2.25 V
Base Current: -3 mA
Collector Current: -35 mA
Junction Temperature: 150°C
Storage Temperature: -55°C to 150°C
ESD Hardness: 1.5 kV HBM
Material: SiGe:C technology
RoHS compliant, Halogen free
Buy the Infineon BFP840FESD – Reliable RF Transistor for Wi-Fi and Satellite Applications
Purchase the Infineon BFP840FESD RF power transistor online today and elevate your RF system performance. Featuring excellent high-frequency gain, low noise figure, and built-in ESD protection, this device is ideal for Wi-Fi, satellite, and mobile communication applications. Its compact TSFP-4-1 package ensures easy integration into modern RF designs, delivering high efficiency and reliability. Take advantage of quick online ordering and ensure your projects benefit from Infineon’s proven high-performance SiGe:C technology for robust and efficient RF solutions.
Buy Infineon BFP840FESD now and experience unmatched RF performance, low noise, and robust reliability for high-frequency communication systems.
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