The IPDD60R190G7 is a high-voltage, 600V CoolMOS™ G7 power transistor designed for efficient high-current switching applications such as PFC, LLC, and high-performance SMPS. It features a DDPak package with Kelvin Source capability, low parasitic inductance, excellent thermal properties, and improved FOM Rosjon, Qg. Suitable for industrial and demanding power electronics, it offers faster switching, higher efficiency, and enhanced thermal management, making it ideal for telecom, server, computing, UPS, and solar systems requiring reliable high-power performance.
INFINEON IPDD60R190G7XTMA1 Power Transistor Specifications:
Maximum drain-source voltage: 600 V
Continuous drain current: 2 A
Pulsed drain current: 36 A
Avalanche energy, single pulse: 42 mJ
Avalanche energy, repetitive: 0.21 mJ
Power dissipation: 76 W
Junction temperature range: -55°C to 150°C
Storage temperature range: -55°C to 150°C
Gate threshold voltage: 3-4 V
Drain-source on-resistance: 0.409 Ω (max)
Body diode reverse recovery time: 235 ns
Thermal resistance, junction-case: 1.65°C/W
Reverse diode forward voltage: 0.8 V
Gate charge total: 18 nc
Gate resistance: 0.9 Ω
Reflow soldering temperature: 260°C
Insulation withstand voltage: specified per datasheet
Buy the Infineon IPDD60R190G7 – Reliable Power Transistor for Industrial Applications
Purchase the Infineon IPDD60R190G7 power transistor online now to experience high efficiency, reliable switching, superior thermal management, and robust performance in demanding industrial and high-power applications. Designed with advanced CoolMOS™ G7 technology, this 600V device features a low on-resistance, Kelvin Source capability, and a compact DDPak package for easy integration into PFC, LLC, SMPS, and solar systems. Secure your supply today and enhance your projects with proven quality and outstanding durability.
Order your Infineon Series IPDD60R190G7 power transistor today and give your high-current power projects the dependable quality they deserve.
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