The FS75R12KE3G is an advanced IGBT module designed by Infineon for inverter and switching applications. It features high collector-emitter voltage of 1200 V, continuous collector current of 75 A, and peak collector current of 150 A. The module incorporates robust thermal management, with a junction-to-case resistance of 0.35 K/W, and operates under switching conditions from -40°C to 125°C. Its low switching losses and high reliability make it ideal for industrial motor drives, renewable energy systems, and high-power inverter projects, ensuring efficiency and durability in demanding environments.
INFINEON FS75R12KE3GBOSA1 High Power IGBT Module Specifications:
Collector-Emitter Voltage: 1200 V
Continuous Collector Current: 75 A
Peak Collector Current: 150 A
Total Power Dissipation: 355 W
Gate-Emitter Peak Voltage: +120 V
Collector-Emitter Saturation Voltage: 2.15 V (typ), 1.70 V (min)
Gate Threshold Voltage: 3.0 V (typ)
Gate Charge: 0.70 µC
Internal Gate Resistor: 10 Ω
Input Capacitance: 5.30 nF
Reverse Gate Capacitance: 0.20 nF
Thermal Resistance, Junction to Case: 0.35 K/W
Operating Temperature Range: -40°C to 125°C
Isolation Test Voltage RMS: 2.5 kV
Weight: 300 g
Mounting Torque: 600 Nm
Buy the Infineon Series FS75R12KE3G IGBT Module: FS75R12KE3G
Purchase the Infineon FS75R12KE3G IGBT module online today to enhance your inverter and power switching systems. Designed for high voltage and high current, it features excellent thermal performance and reliable operation at temperatures from -40°C to 125°C. Its compact design, low switching losses, and robust construction make it ideal for industrial, automotive, and renewable energy applications. Invest in quality with fast delivery and expert support to ensure your projects run smoothly and efficiently.
Get Infineon FS75R12KE3G high-power IGBT module today—built for precision, efficiency, and long-lasting durability in demanding inverter applications.
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