INFINEON IAUA250N04S6N007AUMA1 Automotive Power MOSFET
The Infineon OptiMOS™-6 power MOSFET provides high-quality N-channel enhancement mode transistors suitable for automotive applications. It features a low Rds(on) of 0.58-0.80 mΩ, a maximum drain current of 435A, and a drain-source voltage of 40V. Qualified under AEC Q101 standards, it offers excellent avalanche energy performance, high avalanche current, and a maximum operating temperature of 175°C. The device is RoHS compliant, RoHS RoHS, and 100% avalanche tested, making it a reliable choice for high-power, high-efficiency automotive and industrial systems.
INFINEON IAUA250N04S6N007AUMA1 Automotive Power MOSFET Specifications:
Drain-source voltage: 40V
Maximum drain current: 435A
Rds(on): 0.58-0.80 mΩ
Avalanche energy: 375 mJ
Avalanche current: 125A
Gate-source voltage: ±20V
Maximum power dissipation: 250W
Operating temperature: -55°C to 175°C
Junction-to-case thermal resistance: 0.6 K/W
Junction-to-ambient thermal resistance: 22.7 K/W
Gate threshold voltage: 2.2-3.0 V
Static drain-source resistance: 0.58-0.80 mΩ
Input capacitance: 7442-9898 pF
Output capacitance: 2242-2982 pF
Reverse recovery time: 66 ns
Diode forward voltage: 0.8V at 125A
Device is RoHS compliant and 100% avalanche tested
Buy the Infineon Series OptiMOS 6 Power Transistor: IAUA250N04S6N007
Purchase the Infineon IAUA250N04S6N007 online to ensure your high-power automotive and industrial applications benefit from premium quality. This N-channel enhancement mode MOSFET offers a low Rds(on) of 0.58-0.80 mΩ, capable of handling up to 435A drain current at 40V, with excellent avalanche energy and avalanche current ratings. RoHS compliant and 100% avalanche tested, it guarantees reliability under extreme conditions. Ideal for automotive systems, industrial drives, and high-efficiency power designs, buy now for verified durability and top-tier performance.
Get Infineon IAUA250N04S6N007 today—built for high efficiency, automotive power regulation, and long-lasting durability.
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