INFINEON IPAN70R360P7SXKSA1 High-Voltage Power MOSFET
The 700V CoolMOS™ P7 Power Transistor from Infineon is a high-performance, superjunction MOSFET designed for high-voltage switching applications. It features extremely low losses, excellent thermal behavior, and high ESD ruggedness. Suitable for flyback topologies in chargers, adapters, and lighting, it offers a cost-effective solution with fast switching capabilities and supports high power density designs. Its integration of ESD protection and low Rds(on) ensures efficiency and reliability in demanding industrial and consumer electronics applications.
INFINEON IPAN70R360P7SXKSA1 High-Voltage Power MOSFET Specifications:
Maximum drain-source voltage: 700 V
Continuous drain current: 75 A at 100°C
Pulsed drain current: 34 A
Drain-source resistance Rds(on): typ. 0.067 Ω at Vgs=10V, Tj=150°C
Gate threshold voltage: typ. 3.3 V; max. 3.5 V
Gate charge total Qg: typ. 16.4 nc
Input capacitance: typ. 517 pF
Output capacitance: typ. 11 pF
Reverse recovery time: typ. 210 ns
Diode forward voltage: typ. 0.9 V at 3.8 A
Operating temperature range: -40°C to 150°C
Thermal resistance junction-ambient: typ. 80 °C/W
Package: PG-TO 220 FullPAK - Narrow Lead
Buy the Infineon IPAN70R360P7S – Reliable High-Voltage MOSFET for Industrial Applications
Purchase the Infineon IPAN70R360P7S MOSFET online today to enhance your high-voltage power switching systems. This advanced 700V device delivers low conduction and switching losses, supports high power density, and ensures excellent thermal management for demanding applications. Its low Rds(on) and efficient switching characteristics make it ideal for chargers, adapters, lighting, and industrial automation. Trust Infineon for quality, reliability, and high performance in your electronic designs—order now and improve your system's efficiency and durability.
Buy Infineon IPAN70R360P7S now and experience unmatched reliability and performance in high-voltage switching solutions, suitable for industrial and consumer electronics.
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