The 650V Silicon Carbide Schottky Diode offers advanced efficiency for automotive and industrial applications. Featuring a compact D2PAK package and rated for 12A continuous current, it excels in high surge capability and operates across temperatures from -40°C to 175°C. Its zero reverse recovery and temperature-independent switching improve overall system efficiency, reduce EMI, and enable higher frequency solutions. This device is qualified for automotive standards (AEC-Q100/101) and ideal for traction inverters, onboard chargers, and DCDC converters, enhancing system reliability and reducing cooling needs.
Surge non-repetitive forward current: 50 A (T=25°C, t=10ms)
Peak forward current: 505 A (T=25°C, t=10us)
Power dissipation: 62 W at 25°C
Operating temperature: -40°C to 175°C
Junction-to-case thermal resistance: 1.9 K/W
Junction-to-ambient thermal resistance: 62 K/W
Reverse recovery charge: 18 nc at Va=400 V
Total capacitance: 47 pF at Vg=300 V, f=1 MHz
Diode forward voltage: approximately 2.7 V at 12A and 150°C
ESD tolerance (HBM): 8 kV
Buy the Infineon AIDK12S65C5 – Reliable Silicon Carbide Schottky for Industrial Applications
Upgrade your power electronics with the reliable Silicon Carbide Schottky Diode designed for high voltage and current applications. This diode offers superior efficiency, lower switching losses, and outstanding surge current capability, making it ideal for traction inverters, onboard chargers, and DCDC converters. Its compact D2PAK package ensures easy integration into your system, with a broad temperature range from -40°C to 175°C. Achieve enhanced system reliability, reduced cooling requirements, and better electromagnetic compatibility by choosing this cutting-edge semiconductor component for your next project.
Order your Infineon AIDK12S65C5 Silicon Carbide Schottky Diode today and enhance your power systems with high efficiency, robust surge capability, and reliable automotive performance.
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