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INFINEON IPB020N10N5LFATMA1 High-Voltage Power MOSFET
The OptiMOS 5 Linear FET is a 100 V N-channel MOSFET ideal for hot-swap and e-fuse applications, offering very low on-resistance and a wide safe operating area. It features 100% avalanche testing, Pb-free plating compliant with RoHS, and is qualified according to JEDEC standards. The device's high current capability makes it suitable for demanding power management applications, providing efficient conduction and reliable switching performance in compact, thermally optimized packages.
INFINEON IPB020N10N5LFATMA1 High-Voltage Power MOSFET Specifications:
- Maximum drain-source voltage Vds: 100 V
- Continuous drain current Id: 120 A at Tc=100°C
- Pulsed drain current Ipeak: 480 A
- Gate threshold voltage Vgs(th): 1 to 4 V
- Drain-source on resistance Rds(on): Max 2.0 mΩ at Vgs=10 V, Id=100 A
- Avalanche energy Ens: 979 mJ
- Power dissipation: Max 313 W
- Operating and storage temperature: -55°C to 150°C
- Gate charge Qg: Max 195 nC
- Gate resistance: 66 Ω
- Thermal resistance junction to case Rth JC: Max 0.25 K/W
- Device on PCB with minimal footprint Rth JA: 62 K/W
- Capacitances: Ciss Max 840 pF, Coss Max 2500 pF, Crss Max 25 pF
- Reverse diode pulse current: 480 A and forward voltage: Max 1.2 V
Buy the Buy Infineon OptiMOS 5 Linear FET Part Number IPB020N10N5LF Online
Enhance your power circuitry with the Infineon OptiMOS 5 Linear FET. This 100 V N-channel MOSFET delivers low Rds(on) and high current capacity, ideal for hot-swap and e-fuse applications. Its robust avalanche breakdown, broad SOA, and RoHS compliance make it a reliable choice for high-power, high-efficiency modules. Purchase online today to benefit from quick delivery, quality assurance, and the latest device technology designed for demanding industrial and consumer electronic systems.
Buy Infineon OptiMOS 5 Linear FET IPB020N10N5LF now and experience unmatched reliability and performance in high-current power management applications.
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Who is the manufacturer of IPB020N10N5LFATMA1?
INFINEON