INFINEON IPD135N03LGATMA1 High-Performance Power MOSFET
The Infineon IPD135N03L G is a high-performance N-channel MOSFET optimized for SMPS and DC/DC converters. It features a fast switching capability, low R on resistance of 13.5 μΩ, and a drain current of 30 A at 25°C. This device is avalanche rated, RoHS compliant, and halogen-free, making it suitable for reliable industrial and power management applications. Its low gate charge, excellent gate charge to R ps(on) product, and thermal stability ensure efficient power conversion and minimal energy loss, ideal for demanding electronic systems.
INFINEON IPD135N03LGATMA1 High-Performance Power MOSFET Specifications:
Maximum drain-source voltage Vds: 30 V
Continuous drain current Id: 30 A at 25°C
Pulsed drain current Id,pulse: 210 A
Gate threshold voltage Vgs: 1 to 22 V
On-resistance Rds(on): 13.5 μΩ at Vgs=4.5 V and Id=20 A
Gate-source voltage Vgs: ±20 V
Power dissipation Ptot: 31 W at 25°C
Operating temperature range: -55°C to 175°C
Thermal resistance junction-case: 4.9 K/W
Package: PG-TO252-3
Buy the Infineon IPD135N03L G – Reliable Power MOSFET for Industrial Applications
Purchase the Infineon IPD135N03L G high-current power MOSFET online now and benefit from low R on resistance, rapid switching, and excellent thermal stability. Designed for industrial power switching, it offers high pulsed current capability of 210 A and is RoHS compliant, halogen-free, ensuring compliance with environmental standards. Whether for SMPS or DC/DC converters, this reliable MOSFET ensures minimal energy loss and long-term durability, making it the ideal choice for demanding electronic systems and power management solutions.
Order your Infineon IPD135N03L G high-current MOSFET today and enhance your power conversion efficiency with this robust, industry-grade device.
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