INFINEON BGA5L1BN6E6327XTSA1 High Gain LTE Low Noise Amplifier
The BGASL1BNG6 is a compact, high-performance LTE low noise amplifier covering 600 to 1000 MHz. It offers 18.5 dB gain, 0.7 dB noise figure, and low current consumption of 8.2 mA. The device features a multi-state control for bypass and high gain modes, with an ultra-small TSNP-6-10 leadless package. Suitable for improving LTE data rates at cell edges, it is based on Infineon's Silicon Germanium technology and includes an internally matched 50 Ohm RF output. Its low external component count simplifies integration in RF front-ends.
INFINEON BGA5L1BN6E6327XTSA1 High Gain LTE Low Noise Amplifier Specifications:
Operating frequency: 600 - 1000 MHz
Gain: 18.5 dB
Noise figure: 0.7 dB
Insertion loss in bypass: 2.7 dB
Current consumption: 8.2 mA in high gain mode, 8.2 mA in bypass
Supply voltage: 1.5 V to 3.6 V
Package: TSNP-6-10 leadless, footprint: 0.7 x 1.1 mm
RF output: internally matched to 50 Ohm
Technology: Silicon Germanium (SiGe)
Isolation: >22 dB (high gain mode), >15 dB (bypass)
Power handling: +25 dBm input power
Temperature range: -40°C to +85°C
RoHS compliant, Pb-free
Buy the Buy Infineon 18dB High Gain Low Noise Amplifier Part Number BGA5L1BN6E6327XTSA1 Online
Enhance your LTE network performance with this high gain low noise amplifier designed for low band frequencies from 600 to 1000 MHz. Featuring 18.5 dB gain and a noise figure of only 0.7 dB, it ensures superior signal quality even at the cell edge. Its compact TSNP-6-10 leadless package and low external component requirements simplify system integration. Suitable for industrial and communications applications, this amplifier provides excellent RF output matching and multi-mode operation for bypass and high gain modes, delivering reliable, efficient, and high-quality LTE connectivity.
Buy Infineon BGA5L1BN6E6327XTSA1 now and experience unmatched reliability and high-performance LTE signal amplification with low noise and power consumption.
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