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INFINEON IPD60R2K0PFD7SAUMA1 High Voltage Power MOSFET

The 600V CoolIMOS PFD7 is a high-performance superjunction (SJ) power MOSFET optimized for cost-sensitive applications like chargers, adapters, lighting, and motor drives. It features extremely low conduction and switching losses, fast body diode recovery, and excellent thermal behavior, enabling high efficiency and high power density in slim designs. Qualified according to JEDEC standards, it supports high switching frequencies and ruggedness, making it suitable for ZVS topologies and high-density, compact power systems with advanced safety and reliability standards.

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Source:Newark
Part No:IPD60R2K0PFD7SAUMA1
Stock:636
Inv Date:05-29-2026
Price: Unit price: $0.78
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Source:DigiKey
Part No:IPD60R2K0PFD7SAUMA1
Stock:3962
Inv Date:05-29-2026
Price: Unit price: $1.23
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Part No:IPD60R2K0PFD7SAUMA1
Stock:974
Inv Date:05-30-2026
Price: Unit price: $0.98
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Part No:IPD60R2K0PFD7SAUMA1
Stock:190
Inv Date:05-30-2026
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INFINEON IPD60R2K0PFD7SAUMA1 High Voltage Power MOSFET Specifications:

  • Maximum drain-source voltage Vds: 600 V
  • Continuous drain current Id: 30 A at Tj=25°C
  • Pulsed drain current Ipd: 45 A
  • Avalanche energy single pulse: 5 mJ
  • Avalanche energy repetitive: 0.03 mJ
  • Drain-source on-resistance Rds(on): 24 mΩ at Vgs=10V, Tj=150°C
  • Gate threshold voltage Vgs(th): 3.5 to 4.5 V
  • Gate charge Qg: 3.8 nC
  • Body diode recovery time: 34 to 51 ns
  • Maximum power dissipation Pd: 20 W at Tj=25°C
  • Thermal resistance junction-to-case Rthjc: 6.1 °C/W
  • Thermal resistance junction-to-ambient Rthja: 62 °C/W
  • Operating junction temperature Tj: -40°C to 150°C
  • Storage temperature Tstg: -40°C to 150°C
  • Gate-source voltage Ves: ±20 V static, ±30 V AC
  • Reverse diode current Is: 3 A at Tc=25°C
  • Maximum dv/dt: 120 V/ns

Buy the Infineon IPD60R2KOPFD7S – Reliable High Voltage MOSFET for Industrial Applications

Purchase the high-performance 600V superjunction MOSFET online now and ensure your power systems achieve maximum efficiency, compact size, and high reliability. Designed for industrial, lighting, and motor drive applications, this device features low conduction and switching losses, fast recovery, and excellent thermal characteristics. With qualified manufacturing standards and rugged ruggedness, it’s ideal for high-density power designs and ZVS topologies. Order today and upgrade your projects with trusted technology for high power density and top-tier durability.

Order your Infineon SeriesIPD60R2KOPFD7S high-voltage MOSFET today and enhance your power designs with reliable efficiency and ruggedness.

Frequently Asked Questions

Where can I buy INFINEON IPD60R2K0PFD7SAUMA1?

You can click on the BUY or RFQ button to purchase IPD60R2K0PFD7SAUMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPD60R2K0PFD7SAUMA1?

You can download the IPD60R2K0PFD7SAUMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPD60R2K0PFD7SAUMA1?

INFINEON

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