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INFINEON IPD80R2K4P7ATMA1 High-Voltage Power MOSFET

The 800V CoolMOS™ P7 power transistor is a high-performance, super junction technology device designed for industrial and consumer applications. It features best-in-class Rds(on) and low gate charge, enabling efficient, high-density power designs. Its fully optimized DPAK package offers reliable switching performance suitable for flyback topologies, LED lighting, low power chargers, PFC stages, and solar applications. With integrated ESD protection and robust quality standards, it ensures enhanced reliability in hard and soft switching operations, reducing failures and improving product yields.

Authorized Distributors
Source:Newark
Part No:IPD80R2K4P7ATMA1
Stock:909
Inv Date:05-29-2026
Price: Unit price: $1.34
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Source:DigiKey
Part No:IPD80R2K4P7ATMA1
Stock:4775
Inv Date:05-29-2026
Price: Unit price: $1.52
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Part No:IPD80R2K4P7ATMA1
Stock:9180
Inv Date:05-30-2026
Price: Unit price: $1.3
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Part No:IPD80R2K4P7ATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.63
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Source:Arrow EU
Part No:IPD80R2K4P7ATMA1
Stock:2500
Inv Date:05-30-2026
Price: N/A
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Part No:IPD80R2K4P7ATMA1
Stock:2500
Inv Date:05-30-2026
Price: N/A
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INFINEON IPD80R2K4P7ATMA1 High-Voltage Power MOSFET Specifications:

  • Drain-source Breakdown Voltage: 800 V
  • Maximum Continuous Drain Current: 17 A at 100°C
  • Pulsed Drain Current: 5.3 A
  • Avalanche Energy (single pulse): 4 mJ
  • Repetitive Avalanche Energy: 0.04 mJ
  • Maximum Power Dissipation: 22 W
  • Operating Temperature Range: -55°C to 150°C
  • Gate Threshold Voltage: 3 V (typical), 3.5 V (max)
  • Drain-source On Resistance: 53 mΩ (typical at Vgs=10V, Tj=150°C)
  • Gate Resistance: 4 Ω
  • Input Capacitance: 150 pF
  • Output Capacitance: 3.8 pF
  • Reverse Recovery Time: 600 ns
  • Diode Forward Voltage: 0.9 V
  • Package: PG-TO 252-3 (DPAK)
  • Maximum Storage Temperature: 150°C
  • Soldering Temperature (Reflow): 260°C

Buy the Infineon IPD80R2K4P7 U2013 Reliable MOSFET for Industrial Applications

Purchase the Infineon high-voltage MOSFET online today and benefit from industry-leading efficiency, robust reliability, and optimized package design. This 800V device offers excellent switching characteristics, low on-resistance, and integrated ESD protection, making it perfect for industrial, solar, LED lighting, and power supply applications. By ordering online, you gain quick access to premium quality components that help reduce system failures, improve energy efficiency, and simplify your design process. Trust Infineon for dependable power solutions.

Order your Infineon Series IPD80R2K4P7 high-voltage MOSFET today and enhance your power conversion efficiency with industry-leading performance.

Frequently Asked Questions

Where can I buy INFINEON IPD80R2K4P7ATMA1?

You can click on the BUY or RFQ button to purchase IPD80R2K4P7ATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPD80R2K4P7ATMA1?

You can download the IPD80R2K4P7ATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPD80R2K4P7ATMA1?

INFINEON

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