The BFP540ESD is a high-performance, low noise silicon bipolar RF transistor designed for ESD protected high gain low noise amplifiers operating at 1.8 GHz. It features outstanding ESD robustness with a typical value of 1000 V (HBM), making it suitable for critical RF applications. The device offers a maximum collector-emitter voltage of 45 V, a transition frequency of 30 GHz, and a power gain of 21.5 dB at 1.8 GHz. Its compact SOT343 package and RoHS compliance ensure reliability and durability in demanding environments.
Buy the Buy Infineon BFP540ESD Part Number BFP540ESDH6327XTSA1 Online
Purchase the Infineon BFP540ESD online today and ensure your RF systems benefit from high gain, exceptional low noise characteristics, and superior ESD robustness. This transistor's compact SOT343 package makes it ideal for space-constrained applications, while its high maximum collector-emitter voltage and frequency capabilities ensure excellent performance at 1.8 GHz. RoHS compliant and halogen-free, this device guarantees environmentally responsible operation. Secure your supply now for reliable, high-performance RF amplification and communication systems.
Buy Infineon BFP540ESD now and experience unmatched reliability, high linearity, and low noise performance for RF amplifier applications.
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