The CoolMOS CFD7 power transistor is a high-voltage, ultra-fast switching MOSFET designed for soft switching topologies like ZVS and LLC resonant converters. It features an optimized superjunction structure, low gate charge, and outstanding reverse recovery performance, enabling high efficiency and power density. Fully qualified per JEDEC standards, it offers excellent ruggedness against hard commutation, making it ideal for applications in server, telecom, and electric vehicle charging systems. Its advanced technology ensures reliable operation in resonant topologies with increased efficiency and robustness.
INFINEON IPDD60R090CFD7XTMA1 Power Transistor Specifications:
Drain-source breakdown voltage: 600 V
Continuous drain current: 3 A
Pulsed drain current: 79 A
Avalanche energy, single pulse: 93 mJ
Avalanche energy, repetitive: 0.47 mJ
Gate threshold voltage: 3.5 to 4.5 V
Gate charge total: 42 nc
Turn-on delay time: 24 ns
Fall time: 15 ns
Reverse recovery charge: 0.45 to 0.90 µC
Diode forward voltage: 1.0 V
Maximum operating junction temperature: -55°C to 150°C
Thermal resistance junction-to-ambient: 62 °C/W
Package: PG-HDSOP-10-1
Buy the Infineon Series CFD7 Power Transistor: IPDD60R090CFD7
Order the Infineon CFD7 power transistor online today and benefit from cutting-edge superjunction technology, fast switching capabilities, and excellent ruggedness suited for server, telecom, and EV charging systems. This 600V high-voltage MOSFET ensures superior efficiency, reliability under hard switching conditions, and easy integration into resonant topologies. With fully qualified JEDEC certification, purchase online now to enhance your power supply designs with industry-leading performance, quick delivery, and dedicated technical support for your projects.
Buy Infineon CFD7 Power Transistor now and experience unmatched reliability, high efficiency, and robust performance in resonant power applications.
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