This high-performance HEXFET Power MOSFET is suitable for motion control, high-efficiency switching in SMPS, uninterruptible power supplies, and high-frequency circuits. It features an 85A continuous drain current, low Rg,on resistance, low gate charge, and a 150V drain-to-source breakdown voltage. The device supports a maximum power dissipation of 350W and operates within a junction temperature range of -65°C to +175°C. Encased in a compact TO-262 package, it ensures reliable performance in demanding power applications with enhanced switching and EMI characteristics.
INFINEON IRFS4321TRLPBF Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 150V
Static Drain-to-Source On-Resistance: 12-15 mΩ
Continuous Drain Current at 25°C: 85A
Continuous Drain Current at 100°C: 60A
Pulsed Drain Current: 330A
Maximum Power Dissipation: 350W
Gate-to-Source Voltage: +30V
Operating Junction Temperature Range: -65°C to +175°C
Thermal Resistance Junction-to-Case: 0.43°C/W
Thermal Resistance Junction-to-Ambient: 40°C/W
Soldering Temperature (10 sec): 300°C
Package: TO-262
Avalanche Energy (Single Pulse): 120mJ
Gate Threshold Voltage: 3.0V to 5.0V
Gate Charge: 71-110nC
Gate-to-Drain Miller Charge: 21-
Input Capacitance: 4460pF
Output Capacitance: 390pF
Reverse Transfer Capacitance: 82pF
Buy the Buy International HEXFET Power MOSFET Part Number IRFS4321PbF Online
Order the International IRFS4321PbF Power MOSFET online today. Designed for motion control, high-efficiency converters, and power switching, it features 85A continuous drain current, low Rg,on, and a 150V drain-to-source voltage. Its TO-262 package ensures durability and efficient heat dissipation. This MOSFET enhances switching performance with low gate charge and EMI suppression, suitable for high-frequency and high-power circuits. Purchase now for reliable, high-performance power management solutions tailored to industrial needs.
Get International IRFS4321PbF today—built for high power, low Rg,on resistance, and reliable switching in demanding power applications.
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