The Infineon IPP023N04N G is a high-current N-channel MOSFET designed for power switching applications such as ORing and uninterruptible power supplies. It offers low on-resistance, excellent avalanche robustness, and is RoHS compliant. Qualified according to JEDEC standards, this device features a maximum drain current of 90 A, a breakdown voltage of 40 V, and supports pulse currents up to 400 A with a thermal resistance of 0.9 K/W. Its robust construction is suitable for demanding industrial power management, ensuring reliable operation and long-term durability in various electronics systems.
Enhance your power management system with the high-current Infineon Power MOSFET offering low Rds(on), excellent avalanche robustness, and reliable performance up to 175°C. Designed for demanding industrial, automotive, and aerospace applications, this device provides durable, efficient switching capabilities. Its low gate charge facilitates faster switching, reducing power loss, while the compact PG-TO220-3 and PG-TO263-3 packages ensure easy integration into existing systems. Trust Infineon for quality, performance, and longevity in your power electronics solutions.
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You can download the IPP023N04NGXKSA1 datasheet or visit the INFINEON website for support.
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