INFINEON IPW65R029CFD7XKSA1 HighVoltage Power MOSFET
The 650V CoolMOS™ CFD7 is a high-performance power MOSFET designed for resonant switching topologies like LLC and phase-shift-full-bridge. Featuring ultra-fast body diode, reduced switching losses, and excellent thermal behavior, it offers high efficiency, reliability, and power density. Fully qualified per JEDEC standards, it suits industrial and telecom applications, EV charging, and solar inverters. Its ruggedness ensures safe hard commutation, making it ideal for demanding high-voltage switching environments with increased bus voltage safety margins.
Maximum junction operating temperature: -55°C to 150°C
Thermal Resistance ( junction to case): 0.41°C/W
Storage Temperature: -55°C to 150°C
Gate-source Voltage: ±30 V
Body Diode Forward Voltage: 1.0 V typical at 35.8 A
Diode Recovery Time: 208-312 ns
Reverse Diode dv/dt: 70 V/ns
Soldering Temperature (Wave Soldering): 260°C for 10s
Buy the Infineon Series CFD7 650V CoolMOS MOSFET: IPW65R029CFD7XKSA1
Purchase the Infineon Series CFD7 650V CoolMOS MOSFET online to enhance your industrial power, telecom, EV charging, or solar solutions. Known for its exceptional switching efficiency, thermal robustness, and reliable hard commutation, this MOSFET is ideal for resonant topologies such as LLC and phase-shift-full-bridge circuits. With a high breakdown voltage of 650V, low Rds(on), and fast switching times, it delivers high power density and efficiency. Stocked and ready for quick shipping, ensure maximum performance for your high-voltage switching applications by ordering today.
Order your Infineon Series CFD7 650V CoolMOS MOSFET today and give your power switching projects the dependable high-efficiency performance they deserve.
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