The IRF1018ESLPbF is a HEXFET power MOSFET designed for high-efficiency synchronous rectification applications such as switching power supplies and uninterruptible power supplies. It features a drain-to-source breakdown voltage of 60V, a low Rds(on) of approximately 7.1 mΩ at Vgs = 10V, and a continuous drain current of 79A at 25°C. Its rugged avalanche capability and enhanced dv/dt performance make it suitable for high-speed power switching, hard-switched circuits, and high-frequency applications. The device is available in TO-220AB, TO-262, and D?Pak packages, meeting industrial standards for thermal and electrical reliability.
INFINEON IRF1018ESTRLPBF Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 60V
Drain-to-Source On-Resistance: 7.1 mΩ typ., 84 mΩ max. at Vgs=10V
Continuous Drain Current: 79A at Tj=25°C, 56A at Tj=100°C
Pulsed Drain Current: 315A
Power Dissipation: 110W
Gate Threshold Voltage: 2.0V to 4.0V
Total Gate Charge: 46 to 69 nC
Operating Junction Range: -65°C to +175°C
Soldering Temperature: 300°C for 10 seconds
Package Options: TO-220AB, TO-262, D?Pak
Avalanche Energy (Single pulse): 88 mJ
Thermal Resistance Junction-to-Case: 1.32 °C/W
Buy the International IRF1018ESLPbF – Reliable HEXFET Power MOSFET for Industrial Applications
Order the International IRF1018ESLPbF power MOSFET online today to enhance your high-efficiency power switching circuits. With a drain-to-source breakdown voltage of 60V, low Rds(on), and high pulsed current capacity, this HEXFET ensures excellent performance in industrial power supplies, uninterruptible power systems, and high-speed switching applications. Its robust avalanche characteristics and multiple package options guarantee reliable operation under demanding conditions. Improve your system’s efficiency and reliability by purchasing this high-quality, industry-standard MOSFET from authorized online distributors now.
Buy International IRF1018ESLPbF now and experience unmatched reliability and performance in high-current switching applications.
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