The StrongIRFET™ 2 Power-Transistor is a high-performance N-channel power MOSFET optimized for a wide range of applications, including switching and amplification. It features 100% avalanche testing, Pb-free lead plating, and halogen-free compliance. Designed for robustness, it offers high drain current capacity, low Rds(on), and excellent switching characteristics suitable for modern power systems. Qualified according to JEDEC standards, it provides reliable operation, efficient energy dissipation, and consistent thermal performance for industrial, automotive, and power management applications.
INFINEON IPP016N08NF2SAKMA1 Power MOSFET Specifications:
Drain-source breakdown voltage: 80 V
Continuous drain current: 151 A
Pulsed drain current: 784 A
Gate threshold voltage: 2.2 V minimum, 3.8 V maximum
Rds(on): 17 mΩ typical at 6 V
Gate-source voltage: ±20 V
Power dissipation: 38 W
Operating temperature: -55°C to +175°C
Thermal resistance, junction to case: 0.5 °C/W
Thermal resistance, junction to ambient: 40°C/W
Buy the Buy Infineon StrongIRFET Power Transistor Part Number IPP016N08NF2S Online
Secure your order for the Infineon StrongIRFET Power Transistor IPP016N08NF2S online now. Designed for high efficiency, high current capacity, and robust operation, this MOSFET is ideal for switching, power management, and industrial applications. Its avalanche-tested, halogen-free, and RoHS compliant features ensure environmentally friendly and reliable performance. Enjoy fast delivery and expert support. Whether for design integration or replacement, this high-quality transistor provides the durability and precision needed for demanding electronic systems.
Get Infineon StrongIRFET Power Transistor IPP016N08NF2S today—engineered for high current handling, low Rds(on), and reliable thermal performance.
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