This is a single N-channel HEXFET® power MOSFET featuring advanced process technology and ultra-low on-resistance. It offers fast switching capabilities and allows for repetitive avalanche operation up to the maximum junction temperature. The device is optimized for broad availability through distribution partners and is qualified according to JEDEC standards. Packaged in an industry-standard surface-mount power package, it provides a higher current rating—up to 240A depending on die size—offering robust high-current carrying capability, which is approximately 23% higher than comparable D2PAK packages of the same die size.
INFINEON IRF2804STRL7PP High-Current Power MOSFET Specifications:
Drain-to-Source Breakdown Voltage: 40V
Continuous Drain Current (Tc=25°C): 320A
Continuous Drain Current (Tc=100°C): 230A
Pulsed Drain Current: 1360A
Maximum Power Dissipation: 330W
Gate-to-Source Voltage: +20V
Gate Threshold Voltage: 2V to 4V
Rds(on): 1.2 to 1.6 mΩ
Repetitive Avalanche Energy: 1050mJ
Junction Operating Temperature: -55°C to +175°C
Soldering Temperature (10 sec): 300°C
Thermal Resistance Junction-to-Ambient: 62°C/W
Input Capacitance: 6930pF
Output Capacitance: 1750pF
Reverse Transfer Capacitance: 970pF
Body Diode Forward Voltage: 1.3V@160A
Buy the Buy International HEXFET Power MOSFET Part Number IRF2804STRL7PP Online
Enhance your electronic projects with the high-performance HEXFET power MOSFET. Featuring advanced process technology, ultra-low on-resistance, and fast switching, it handles high currents efficiently. Suitable for switching power supplies, motor control, and other high-power applications, this device ensures reliability at elevated junction temperatures up to 175°C. Its robust design offers high pulsed current capacity and low thermal resistance for optimal heat dissipation, making it an ideal choice for demanding industrial and high-current switching environments. Purchase online today and leverage top-tier performance for your designs.
Buy International HEXFET IRF2804STRL7PP now and experience unmatched reliability and high-current performance with ultra-low on-resistance and fast switching speed.
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