The IRF8010PbF is a HEXFET® power MOSFET designed for high conversion efficiency in power switching applications such as high frequency DC-DC converters, UPS, and motor control. It features low gate-to-drain charge for reduced switching losses, fully characterized capacitance including Coss for simplified design, avalanche voltage and current ratings, and a high continuous drain current of 80A at 25°C. Its TO-220AB package ensures robust performance and thermal management, making it ideal for demanding industrial applications requiring reliable, high-performance power switching.
Reverse Diode Forward Voltage: 13V at 80A, Ts=28°C
Pulse Width Limit: 300μs, Duty Cycle: < 2%
Package: TO-220AB, Lead-Free
Operating Junction Temperature Range: -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
Mounting Torque: 1.1 Nm (10 in-lbf)
Buy the International Series HEXFET Power MOSFET: IRF8010PbF
Enhance your power electronics with the International Series HEXFET Power MOSFET IRF8010PbF. This high-current, low-resistance MOSFET is ideal for efficient switching in industrial power supplies, motor control, and high-frequency DC-DC converters. Featuring low gate charge, robust avalanche and avalanche current ratings, and reliable thermal performance, it ensures dependable operation even in demanding environments. Easy to install with TO-220AB packaging, this component is perfect for engineers seeking high-performance power switching solutions online.
Order your International Series HEXFET Power MOSFET IRF8010PbF today and give your power switching circuits the dependable quality they deserve.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase IRF8010PBF from an authorized INFINEON distributor.
How do I troubleshoot issues or seek technical support for part IRF8010PBF?
You can download the IRF8010PBF datasheet or visit the INFINEON website for support.
Who is the manufacturer of IRF8010PBF?
INFINEON
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