The IRFB3006PbF is a HEXFET® Power MOSFET designed for high-efficiency switching applications such as SMPS, uninterruptible power supplies, and high-frequency circuits. It features a drain-to-source voltage of 60V, continuous drain current of 270A at 25°C, and a maximum power dissipation of 375W. The device offers low Rds(on) of 25mΩ at 10V gate drive, high avalanche energy capability, and excellent avalanche ruggedness. Its package is TO-220AB, providing reliable thermal management and robust performance for demanding power switching needs.
Buy the Buy IR FET Power MOSFET Part Number IRFB3006PBF Online
Purchase the IRFB3006PbF power MOSFET online today to benefit from high current capacity, low Rds(on), and exceptional ruggedness. Ideal for high-efficiency switching power supplies, inverters, and high-frequency applications, this device ensures reliable operation with a maximum drain current of 270A at 25°C and a drain-to-source voltage of 60V. Its TO-220AB package provides excellent thermal management, making it suitable for both industrial and demanding power electronics projects. Secure your supply today and optimize your power circuits!
Order your IRFB3006PbF High-Current HEXFET power MOSFET today and enhance your power switching efficiency and reliability in demanding circuits.
Frequently Asked Questions
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