The IRFB3306PbF is a high-performance HEXFET power MOSFET designed for efficient power switching in high-current applications. It features a drain-to-source voltage of 60V, continuous drain currents up to 160A, and low on-resistance of 4.2 mΩ at Vgs=10V, ensuring minimal power loss. Its rugged construction includes a TO-220AB package, RoHS compliance, and halogen-free materials, making it suitable for use in SMPS, uninterruptible power supplies, and high-speed switching circuits. Enhanced avalanche and dynamic dV/dt capabilities offer higher reliability under demanding conditions.
Operating Junction Temperature Range: -55°C to +175°C
Thermal Resistance Junction-to-Case: 0.65°C/W
Gate Threshold Voltage: 2.0V to 4.0V
Gate-to-Source Voltage: ±20V
Gate Charge: 85-120nC
Body Diode Forward Voltage: 1.3V (at 75A)
Repetitive Avalanche Energy: 184 mJ
Package Types: TO-220AB, D2Pak, TO-262
RoHS compliant, Halogen-Free
Buy the IR Rectifier Series IRFB3306PBF: High Performance Power MOSFET
Purchase the IRFB3306PBF online today and improve your power management system with this high-current HEXFET MOSFET. Its low on-resistance, high current capacity, and rugged design ensure optimal performance for demanding electronic circuits. Available in RoHS compliant packages, it is suitable for high-efficiency power supplies, high-speed switching, and heavy-duty industrial applications. Order now to benefit from fast delivery and expert support, and elevate your electronic designs with this reliable power component.
Buy IR Rectifier IRFB3306PBF now and experience unmatched reliability and performance in power switching applications.
Frequently Asked Questions
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