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INFINEON IRFB4615PBF Power MOSFET

The IRFB4615PbF HEXFET Power MOSFET is designed for high-efficiency synchronous rectification in switching power supplies, uninterruptible power supplies, and high-frequency circuits. It offers a drain-to-source breakdown voltage of 150V, continuous drain currents of up to 35A at 25°C, and a low on-resistance of 32 mΩ. This rugged device provides improved gate, avalanche, and dynamic dV/dt capabilities, fully characterized avalanche SOA, and enhanced body diode performance. Its TO-220AB package enhances thermal dissipation, making it suitable for demanding industrial applications requiring reliable high-speed switching.

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Source:DigiKey
Part No:IRFB4615PBF
Stock:24
Inv Date:05-29-2026
Price: Unit price: $2.54
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Part No:IRFB4615PBF
Stock:181
Inv Date:05-30-2026
Price: Unit price: $2.08
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Part No:IRFB4615PBF
Stock:300
Inv Date:05-29-2026
Price: Unit price: $0.29
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Part No:IRFB4615PBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.61
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Source:Arrow EU
Part No:IRFB4615PBF
Stock:1522
Inv Date:05-30-2026
Price: N/A
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Part No:IRFB4615PBF
Stock:30
Inv Date:05-30-2026
Price: N/A
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INFINEON IRFB4615PBF Power MOSFET Specifications:

  • Drain-to-Source Breakdown Voltage: 150 V
  • Continuous Drain Current at 25°C: 35 A
  • Continuous Drain Current at 100°C: 25 A
  • Pulsed Drain Current: 140 A
  • Maximum Power Dissipation: 144 W
  • Gate-to-Source Voltage: +20 V
  • Vds (Drain-to-Source Breakdown Voltage): 150 V
  • Drain-to-Source On-Resistance: 32-39 mΩ
  • Gate Threshold Voltage: 3.0-5.0 V
  • Operating Junction and Storage Temperature Range: -55°C to +175°C
  • Maximum Soldering Temperature (10 sec): 300°C
  • Thermal Resistance Junction-to-Case: 1.045 °C/W
  • Case-to-Sink Thermal Resistance: 0.50 °C/W
  • Junction-to-Ambient (PCB Mount): 62 °C/W
  • Avalanche Energy (single pulse): 109 mJ
  • Maximum Avalanche Current: See datasheet curves
  • Gate Charges: Qg = 26 nC, Qgs = 8.6 nC, Qoss = 90 nC
  • Output Capacitance: 155 pF, Effective (Energy Related): 179 pF, Time Related: 382 pF
  • Input Capacitance: 1750 pF
  • Diode Forward Voltage: 1.3 V at 21A
  • Reverse Recovery Time: 70 ns
  • Reverse Recovery Charge: 177 – 247 nC

Buy the International IRFB4615PBF – Reliable HEXFET for Industrial Applications

Experience the high efficiency and robust performance of the International IRFB4615PBF Power MOSFET. Designed for demanding industrial applications, it features a 150V breakdown voltage, 35A continuous drain current, low on-resistance, and excellent avalanche characteristics. Its TO-220AB package ensures optimal thermal dissipation, making it ideal for high-frequency, high-speed switching circuits, power supplies, and uninterruptible power systems. Purchase online now to enhance your power management solutions with proven reliability and performance.

Get International IRFB4615PBF today—built for high-speed switching, durability, and reliable industrial power management.

Frequently Asked Questions

Where can I buy INFINEON IRFB4615PBF?

You can click on the BUY or RFQ button to purchase IRFB4615PBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRFB4615PBF?

You can download the IRFB4615PBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRFB4615PBF?

INFINEON

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