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INFINEON IRF1018EPBF HexFET Power MOSFET

The IRF1018EPBF is a 60V N-channel HEXFET Power MOSFET optimized for high-speed power switching and high-efficiency synchronous rectification. It features an enhanced body diode with improved dV/dt and di/dt capabilities, making it suitable for switch-mode power supplies and high-frequency converters. The device offers improved gate charge, avalanche robustness, and dynamic dv/dt ruggedness, ensuring reliable performance in demanding power management applications. Fully characterized for capacitance and avalanche SOA, it provides excellent efficiency and durability in industrial power systems.

Authorized Distributors
Source:Newark
Part No:IRF1018EPBF
Stock:1994
Inv Date:05-29-2026
Price: Unit price: $1.7
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Source:DigiKey
Part No:IRF1018EPBF
Stock:5373
Inv Date:05-29-2026
Price: Unit price: $1.9
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Part No:IRF1018EPBF
Stock:0
Inv Date:05-30-2026
Price: N/A
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Part No:IRF1018EPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $1.42
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Part No:IRF1018EPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.525
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Source:Arrow EU
Part No:IRF1018EPBF
Stock:14100
Inv Date:05-30-2026
Price: N/A
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Part No:IRF1018EPBF
Stock:1202
Inv Date:05-30-2026
Price: N/A
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INFINEON IRF1018EPBF HexFET Power MOSFET Specifications:

  • Drain-to-Source Breakdown Voltage: 60 V
  • Continuous Drain Current at 25°C: 79 A
  • Continuous Drain Current at 100°C: 56 A
  • Pulsed Drain Current: 315 A
  • Maximum Power Dissipation: 110 W
  • Gate-to-Source Voltage: ±20 V
  • Gate Threshold Voltage: 2.0 V to 4.0 V
  • On-Resistance (at Vgs=10V): 7.1 mΩ max
  • Reverse Recovery Time: 26 ns
  • Body Diode Forward Voltage: 1.3 V at 47 A
  • Operating Junction Temperature Range: -65°C to +175°C
  • Soldering Temperature (10 sec): 300°C
  • Thermal Resistance Junction-to-Ambient (TO-220): 62°C/W
  • Case Material: TO-220AB
  • Package Dimensions: Length 40.6 mm, Width 19 mm approximated from datasheet outline
  • Avalanche Energy: 88 mJ (single pulse)
  • Drain-to-Source Breakdown Voltage Temperature Coefficient: 0.073 V/°C
  • Input Capacitance (Cgs): 2290 pF
  • Output Capacitance (Coss): 270 pF
  • Reverse Transfer Capacitance (Crs): 130 pF

Buy the Buy International HEXFET Power MOSFET Part Number IRF1018EPBF Online

Purchase the International IRF1018EPBF HEXFET Power MOSFET online today to ensure high-performance, reliable power switching solutions. This device provides exceptional efficiency, avalanche robustness, and fast switching capabilities ideal for switch-mode power supplies and high-frequency converters. With full characterization for capacitance and avalanche SOA, it guarantees durability and safety in demanding power management systems. Order now to improve your system’s performance with this industry-leading power MOSFET suitable for industrial, electronics, and manufacturing applications.

Buy International IRF1018EPBF power MOSFET now and experience unmatched reliability and high-speed power switching efficiency for your industrial applications.

Frequently Asked Questions

Where can I buy INFINEON IRF1018EPBF?

You can click on the BUY or RFQ button to purchase IRF1018EPBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRF1018EPBF?

You can download the IRF1018EPBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRF1018EPBF?

INFINEON

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