The IRF1018EPBF is a 60V N-channel HEXFET Power MOSFET optimized for high-speed power switching and high-efficiency synchronous rectification. It features an enhanced body diode with improved dV/dt and di/dt capabilities, making it suitable for switch-mode power supplies and high-frequency converters. The device offers improved gate charge, avalanche robustness, and dynamic dv/dt ruggedness, ensuring reliable performance in demanding power management applications. Fully characterized for capacitance and avalanche SOA, it provides excellent efficiency and durability in industrial power systems.
Package Dimensions: Length 40.6 mm, Width 19 mm approximated from datasheet outline
Avalanche Energy: 88 mJ (single pulse)
Drain-to-Source Breakdown Voltage Temperature Coefficient: 0.073 V/°C
Input Capacitance (Cgs): 2290 pF
Output Capacitance (Coss): 270 pF
Reverse Transfer Capacitance (Crs): 130 pF
Buy the Buy International HEXFET Power MOSFET Part Number IRF1018EPBF Online
Purchase the International IRF1018EPBF HEXFET Power MOSFET online today to ensure high-performance, reliable power switching solutions. This device provides exceptional efficiency, avalanche robustness, and fast switching capabilities ideal for switch-mode power supplies and high-frequency converters. With full characterization for capacitance and avalanche SOA, it guarantees durability and safety in demanding power management systems. Order now to improve your system’s performance with this industry-leading power MOSFET suitable for industrial, electronics, and manufacturing applications.
Buy International IRF1018EPBF power MOSFET now and experience unmatched reliability and high-speed power switching efficiency for your industrial applications.
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