The IRFR6215TRPBF is a fifth-generation HEXFET P-channel Power MOSFET with advanced processing for low ON-resistance and fast switching, ideal for automotive and power management. Featuring full avalanche rated design, it handles power dissipation up to 1.5W in surface-mount configurations, compatible with vapor phase, infrared, or wave soldering. Its ruggedized construction ensures reliability in demanding applications, offering excellent efficiency, dynamic dv/dt rating, and a low static drain-to-source ON resistance, making it suitable for use in various industrial and electronics systems needing high-performance power switching.
Soldering temperature (10 sec, 1.6mm from case): 300°C
Switching times (t_on, t_off): approx. 14-53 ns
Internal drain inductance: 45nH
Input capacitance: 860pF
Output capacitance: 220pF
Reverse transfer capacitance: 130pF
Body diode forward voltage: -1.6V at 6.6A
Peak diode recovery dv/dt: 5V/ns
Body diode reverse recovery time: 160-240 ns
Buy the Infineon IRFR6215 U–2013 Reliable P-Channel HEXFET for Industrial Applications
Enhance your power management systems with the IRFR6215TRPBF, a high-performance P-channel HEXFET offering low ON-resistance, fast switching, and full avalanche capability. Designed for surface-mount applications, it provides up to 1.5W dissipation in typical configurations. Its ruggedized, advanced process technology ensures high efficiency and durability in automotive, industrial, and electronic systems. Purchase online today to benefit from quick delivery, proven reliability, and excellent thermal performance for demanding power electronics environments.
Buy Infineon IRFR6215TRPBF now and experience unmatched reliability and performance in power switching applications.
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