The IRFU220N HEXFET Power MOSFET is designed for high-frequency DC-DC converters and SMPS applications, offering low gate-to-drain charge to reduce switching losses, fully characterized capacitance for simplified design, and robust avalanche voltage handling. It features a drain-to-source breakdown voltage of 200V, a continuous drain current of 5.0A at 25°C, and a maximum power dissipation of 43W, making it ideal for telecom and switching power supplies with high efficiency and reliability. Its compact D-Pak package ensures easy installation and thermal management in demanding electronic circuits.
Maximum Safe Operating Area and Avalanche Ratings apply
Buy the Buy International HEXFET Power MOSFET Part Number IRFU220N Online
Purchase the International IRFU220N HEXFET Power MOSFET online today for high-performance switching in power supplies and industrial electronics. This robust device offers a maximum drain-to-source voltage of 200V and a continuous drain current of 5A, ensuring dependable operation across a wide temperature range. Its compact D-Pak package facilitates easy installation and efficient thermal management. Ideal for telecom, switch-mode power supplies, and high-frequency DC-DC converters, this MOSFET provides low switching losses and high efficiency, making it a critical component for demanding electronic systems. Order now to upgrade your projects with this reliable, high-quality device.
Order your International IRFU220N Series HEXFET Power MOSFET today and ensure reliable, efficient performance in your high-power switching applications.
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