The Infineon OptiMOS 5 Power-Transistor is a high-performance N-channel MOSFET designed for battery-powered applications and low-voltage motor drives. Rated at 40 V, it features very low on-resistance, excellent thermal resistance, and is 100% avalanche tested. Its compact TDSON-8 FL package offers enhanced thermal and electrical performance, making it ideal for industrial and automotive power management. It provides high current handling up to 98 A, low gate charge, and superb switching characteristics, ensuring efficiency in demanding high-power applications.
INFINEON ISC036N04NM5ATMA1 Power MOSFET Specifications:
Drain-source Voltage: 40 V
Continuous Drain Current: 98 A at Tj=25°C
Pulsed Drain Current: 392 A
Gate Threshold Voltage: 2.2 V to 3.4 V
Gate-source Voltage: -20 V to 20 V
Power Dissipation: 3.0 W at Tj=25°C
Thermal Resistance, junction to case: 20 °C/W
Thermal Resistance, junction to bottom: 24 °C/W
Avalanche Energy: 40 mJ
Maximum Operating Temperature: -55°C to 175°C
Package: TDSON-8 FL
Gate Charge (Qg): 21–28 nC
Gate Resistance: 28–43 Ω
Buy the Infineon Series OptiMOS 5 Power-Transistor: ISC036N04NM5
Purchase the Infineon OptiMOS 5 Power-Transistor online today to ensure your power management projects feature high efficiency, low on-resistance, and durable thermal design. This advanced N-channel MOSFET offers superb switching capabilities and high current handling up to 98 A, making it ideal for battery-powered devices, motor drives, and industrial applications. Compact in TDSON-8 FL package, it guarantees reliable performance with excellent thermal dissipation and avalanche testing for greater safety and efficiency in demanding environments.
Get Infineon OptiMOS 5 Power-Transistor today—engineered for high current capacity, low Rds(on), and reliable thermal performance.
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