The evaluation platform for 1200 V silicon carbide CoolSiC™ MOSFETs features a modular design with a motherboard and two driver cards. It enables testing in various configurations, including active Miller clamp and bipolar supply options. Designed for technical evaluation, it includes necessary components such as gate drivers, coaxial shunt, and optional accessories for drain current measurement. Suitable for research and development, the platform supports high-voltage testing up to 800 V and pulsed currents up to 130 A, facilitating comprehensive device characterization and performance analysis in power electronics applications.
Secure your high-voltage power testing needs with the Infineon CoolSiC MOSFET evaluation platform including advanced gate drivers. Perfect for R&D, this modular setup supports testing up to 800 V and 130 A, offering flexibility with bipolar supply and Miller clamp functions. Its design includes essential measurement tools and optional accessories to accurately characterize device performance. Effortlessly expand your capabilities by purchasing online and enhance your power electronics development with reliable, industry-leading silicon carbide technology for optimized energy efficiency and switching performance.
You can click on the BUY or RFQ button to purchase REFPSSICDP2TOBO1 from an authorized INFINEON distributor.
You can download the REFPSSICDP2TOBO1 datasheet or visit the INFINEON website for support.
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