The BDV66B is a high-voltage silicon PNP Darlington power transistor with a collector-emitter voltage of 100V and a collector-emitter saturation voltage of 2V at 10A. Featuring monolithic construction with an integrated base-emitter shunt resistor, it is designed for industrial power switching applications. Its maximum collector-base voltage is 100V, emitter-base voltage is 5V, and it can handle a collector current up to 16A continuously. The device dissipates up to 125W, operating reliably within -65°C to +150°C junction temperature range, making it suitable for demanding industrial environments.
Secure your BDV66B high-voltage Darlington transistor online today. This robust power transistor offers reliable performance with 100V voltage rating, 16A current capacity, and 125W dissipation for demanding industrial applications. Designed with monolithic construction and an integrated base-emitter resistor, it ensures efficient power switching and thermal stability. Perfect for industrial control systems, it provides long-lasting durability and high efficiency. Purchase online now to experience fast delivery, easy ordering, and excellent technical support for your power management projects.
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You can download the BDV66B datasheet or visit the MULTICOMP-PRO website for support.
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