The BAP64-06 is a high-voltage silicon PIN diode designed in a compact SOT23 package, suitable for RF attenuators and switches up to 3 GHz. It features low capacitance, low forward resistance, and rapid switching capabilities, with a reverse voltage of 175 V. Qualified under AEC-Q101 standards, it offers reliable performance for automotive, industrial, and RF applications. Its thermal resistance from junction to solder point is 220 KW, and it supports a forward current of 100 mA with a total power dissipation of 250 mW, ensuring durability in demanding environments.
Purchase the NXP BAP64-06 silicon PIN diode online now for robust RF switching and attenuator applications. Featuring high voltage capability, low capacitance, and quick switching, this diode is ideal for industrial and automotive environments. Its compact SOT23 package ensures easy integration into your designs. Designed to operate reliably up to 3 GHz, it guarantees low forward resistance and high durability, supported by AEC-Q101 qualification. Buy online today and experience trusted performance, fast delivery, and technical support for your electronics projects.
You can click on the BUY or RFQ button to purchase BAP6406215 from an authorized NXP distributor.
You can download the BAP6406215 datasheet or visit the NXP website for support.
NXP